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Volume 30 Issue 11
Aug.  2021
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Article Contents
MA Jikai, WANG Dejun, ZHU Qiaozhi, ZHAO Liang, WANG Haibo. Investigation of n-type 4H-SiC wet re-oxidation annealing process and SiO2/SiC interface[J]. Chinese Journal of Engineering, 2008, 30(11): 1282-1285. doi: 10.13374/j.issn1001-053x.2008.11.021
Citation: MA Jikai, WANG Dejun, ZHU Qiaozhi, ZHAO Liang, WANG Haibo. Investigation of n-type 4H-SiC wet re-oxidation annealing process and SiO2/SiC interface[J]. Chinese Journal of Engineering, 2008, 30(11): 1282-1285. doi: 10.13374/j.issn1001-053x.2008.11.021

Investigation of n-type 4H-SiC wet re-oxidation annealing process and SiO2/SiC interface

doi: 10.13374/j.issn1001-053x.2008.11.021
  • Received Date: 2007-11-07
  • Rev Recd Date: 2008-05-28
  • Available Online: 2021-08-06
  • Based on the traditional oxidation process, 4H-SiC MOS capacitors were fabricated by wet re-oxidation annealing (wet-ROA). The oxide film quality was analyzed by I-V characteristics testing and the Flower-Nordheim (F-N) tunneling current model. The SiO2/SiC interface trap density was calculated by the Terman method. The structures of SiO2/SiC interfaces, which were obtained by different processes, were analyzed by XPS. The SiO2/SiC interface fabricated by wet-ROA, with 10 MV·cm-1 in the breakdown field strength of oxide film, 2.46 eV in the barrier height of SiO2/SiC, 1011 eV-1·cm-2 in the interface trap density, can meet the reliability requirement in fabricating devices.

     

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      沈陽化工大學材料科學與工程學院 沈陽 110142

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