Atomistic Simulation of the Influence of Temperature and Loading Rate on Dislocation Emission

Zhou Guohui; Wang Donglei; Huang Yizhong; Chu Wuyang; Zhou Fuxin

doi:10.13374/j.issn1001-053x.1997.06.018

Volume 19 Issue 6

Sep. 2021

Turn off MathJax

Article Contents

Article Navigation > Chinese Journal of Engineering > 1997 > 19(6): 605-609

Zhou Guohui, Wang Donglei, Huang Yizhong, Chu Wuyang, Zhou Fuxin. Atomistic Simulation of the Influence of Temperature and Loading Rate on Dislocation Emission[J]. Chinese Journal of Engineering, 1997, 19(6): 605-609. doi: 10.13374/j.issn1001-053x.1997.06.018

Citation:

Zhou Guohui, Wang Donglei, Huang Yizhong, Chu Wuyang, Zhou Fuxin. Atomistic Simulation of the Influence of Temperature and Loading Rate on Dislocation Emission[J]. Chinese Journal of Engineering, 1997, 19(6): 605-609. doi: 10.13374/j.issn1001-053x.1997.06.018

Citation:

PDF( 413 KB)

Atomistic Simulation of the Influence of Temperature and Loading Rate on Dislocation Emission

doi: 10.13374/j.issn1001-053x.1997.06.018

1. Applied Science School, UST Beijing, Beijing 100083, China;
2. Institute of Mechanics, Chinese Academy of Sciences, 100080

Received Date: 1997-09-12
Available Online: 2021-09-10

Abstract

Abstract

Utilizing EAM potential,Al single crystal with molecular dynamicssimulation method was studied. Under mode Ⅰ and Ⅱ loading, the influence of temperature and loading rate on dislocation emission and the criticalstress intensity factor was analyzed.The simulatedresults show that the critical stress intensity factor for dislocation emission decreases exponentiallyas the temperature increases. Loading rate will influence the critical stress intensity factor to some degree. The critical stress intensity factor will increase as loading rate increases.
- dislocation emission,
- molecular dynamics,
- atomistic simulation,
- Al