低溫取向硅鋼常化工藝和滲氮工藝對組織、織構和磁性能的影響

李霞; 楊平; 賈志偉; 張海利

doi:10.13374/j.issn2095-9389.2019.05.007

低溫取向硅鋼常化工藝和滲氮工藝對組織、織構和磁性能的影響

doi: 10.13374/j.issn2095-9389.2019.05.007

李霞¹,
楊平^1, ,,
賈志偉²,
張海利²

1.
北京科技大學材料科學與工程學院, 北京 100083
2.
鞍鋼集團鋼鐵研究院, 鞍山 114000

詳細信息

通訊作者:
楊平, E-mail: yangp@mater.ustb.edu.cn

中圖分類號: TG142.71
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出版歷程
- 收稿日期: 2018-05-23
- 刊出日期: 2019-05-01

Effects of normalizing process and nitriding process on the microstructure, texture, and magnetic properties in low-temperature grain-oriented silicon steel

1.
School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
2.
Ansteel Iron and Steel Research Institute, Anshan 114000, China

More Information

Corresponding author: YANG Ping, E-mail: yangp@mater.ustb.edu.cn

摘要

摘要: 利用電子背散射衍射技術(EBSD)、掃描電鏡(SEM)分析了低溫取向硅鋼常化工藝、滲氮工藝對常化組織、再結晶組織與抑制劑的影響, 對比研究了常化冷卻速率、滲氮溫度和滲氮量對再結晶組織、織構和磁性能的影響規律.結果表明, 常化冷卻速率越快, 一次再結晶晶粒尺寸越小.常化冷卻速率較慢時, 高溫滲氮的樣品一次再結晶晶粒尺寸偏大, 使二次再結晶驅動力降低, 二次再結晶溫度提高, 且滲氮量低, 追加抑制劑不足, 最終二次再結晶不完善.高溫滲氮與低溫滲氮導致脫碳板中抑制劑尺寸不同, 高溫滲氮表層抑制劑與次表層抑制劑尺寸基本無差異, 低溫滲氮表層抑制劑尺寸比次表層抑制劑尺寸大.低溫滲氮且滲氮量低的樣品雖然二次再結晶較完善, 但由于其常化溫度低、常化冷卻速率快, 一次再結晶晶粒尺寸小, 二次再結晶開始溫度稍早, 黃銅取向晶粒出現, 最終磁性差.滲氮量較高的高溫滲氮和低溫滲氮樣品雖都能基本完成二次再結晶, 但磁性存在差異, 磁性差的原因是高溫滲氮樣品的最終退火板中出現較多的偏{210} < 001>取向晶粒.
- 取向硅鋼 /
- 常化冷卻速度 /
- 滲氮溫度 /
- 抑制劑 /
- 磁性能
Abstract: The influences of the normalization parameters and nitriding parameters on the microstructure of normalized samples, the primary recrystallization microstructure, and inhibitors were analyzed by electron backscatter diffraction (EBSD) and scanning electron microscopy (SEM) techniques. The effects of normalizing cooling rates, nitriding temperatures and nitrogen content on the primary recrystallization and secondary recrystallization microstructure, textures, and properties were studied. The results show that grain sizes decrease with the increasing normalizing cooling rate; when the rate is slow, the grain size of high-temperature nitriding sample increases with the slow normalizing cooling rate, reducing the driving force for secondary recrystallization and increasing secondary recrystallization temperature. The acquired inhibitor is insufficient, which leads to unsuccessful secondary recrystallization. High-temperature nitriding and low-temperature nitriding lead to different sizes of inhibitors in the decarburized sheets; however, inhibitors in the surface and subsurface regions of high-temperature nitriding samples are primarily of the same size, while the inhibitors in the surface region of low-temperature nitriding samples are larger than those of the subsurface inhibitors. The lower-temperature nitriding sample with low nitrogen content exhibits a poor magnetic property. As the grain size remains small at a low normalizing temperature and high normalizing cooling rate, the second recrystallization starts at a slightly lower temperature and Brass-type oriented grains are present. The secondary recrystallization of high-temperature nitriding and low-temperature nitriding samples with high nitrogen content could be basically completed; however, the magnetic properties of samples are different, and more grains with deviated {210} < 001> orientation lead to a reduction in magnetic properties.
- grain-oriented silicon steels /
- normalizing cooling rate /
- nitriding temperature /
- inhibitor /
- magnetic properties

HTML全文

圖 1 常化板組織. (a) A1; (b) B1; (c) C1; (d) D1; (e) E1

Figure 1. Microstructures of normalization-annealed samples: (a) A1; (b) B1; (c) C1; (d) D1; (e) E1

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圖 2 晶粒尺寸分布

Figure 2. Grain size distribution

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圖 3 不同樣品一次再結晶取向成像及相應的ODF圖. (a), (d), (g), (j), (m)分別為ABCDE樣品的一次再結晶取向成像; (b, c)(e, f)(h, i)(k, l)(n, o)分別為ABCDE樣品的ODF圖

Figure 3. Orientation maps and ODFs of different samples after primary recrystallization: (a), (d), (g), (j), (m) orientation maps of ABCDE; (b), (e), (h), (k), (n): ODF of ABCDE; (c), (f), (i), (l), (o): ODF of ABCDE

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圖 4 不同樣品高溫退火后的組織. (a) A; (b) B; (c) C; (d) D; (e) E

Figure 4. Secondary recrystallization structures of different samples: (a) A; (b) B; (c) C; (d) D; (e) E

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圖 5 A樣品二次再結晶晶粒取向成像圖(a)與{100}極圖(b, c)

Figure 5. EBSD orientation images (a) and {100} pole figures (b, c) of sample A

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圖 6 高溫退火中斷試樣宏觀組織. A樣品：(a) 950 ℃; (b) 1000 ℃; (c) 1050 ℃; (d) 1100 ℃; E樣品：(e) 950 ℃; (f) 1000 ℃; (g) 1050 ℃; (h) 1100 ℃; D樣品：(i) 950 ℃; (j) 1000 ℃; (k) 1050 ℃; (l) 1100 ℃

Figure 6. Macrostructure of the samples after interrupted high temperature annealing. Sample A: (a) 950 ℃; (b) 1000 ℃; (c) 1050 ℃; (d) 1100 ℃; sample E: (e) 950 ℃; (f) 1000 ℃; (g) 1050 ℃; (h) 1100 ℃; sample D: (i) 950 ℃; (j) 1000 ℃; (k) 1050 ℃; (l) 1100 ℃

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圖 7 A樣品二次再結晶晶粒取向成像(a)與{100}極圖(b)(c)

Figure 7. EBSD orientation images (a) and {100} pole figures (b)(c) of sample B

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表 1 低溫取向硅鋼工藝參數、滲氮信息及成品磁性能

Table 1. Process parameters, nitriding information, and magnetic properties of grain-oriented silicon steel

常化板編號	脫碳板編號	常化溫度	常化冷速	滲氮溫度/℃	氮質量分數/10^-6	磁感，B₈/T
A1	A	低溫(-20 ℃)	快冷(+5 ℃·s^-1)	750~800	203	1.665
B1	B	中溫	正常冷速	850~900	242	1.776
C1	C	中溫	正常冷速	750~800	225	1.865
D1	D	中溫	正常冷速	750~800	240	1.834
E1	E	中溫	慢冷(-5 ℃·s^-1)	850~900	208	1.652

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表 2 不同樣品一次再結晶織構和晶粒平均尺寸

Table 2. Primary recrystallization textures and average grain size of different samples

樣品編號	晶粒平均尺寸/μm	織構面積占比/%
樣品編號	晶粒平均尺寸/μm	{110}＜001＞	{111}＜112＞	{114}＜481＞	{100}＜012＞
A	15.9	0.383	11.50	27.2	12.4
B	18.5	1.320	12.90	28.1	13.1
C	21.7	2.410	10.90	19.4	11.4
D	20.3	1.060	7.74	30.5	16.6
E	23.7	0.244	11.00	28.4	16.6

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表 3 脫碳板中抑制劑平均尺寸及數量

Table 3. Average size and quantity of inhibitors in the decarbonized sheets

樣品編號(滲氮溫度)	表層抑制劑			次表層抑制劑			表層與次表層抑制劑尺寸之差/nm
樣品編號(滲氮溫度)	尺寸/nm	個數	面密度/μm^-2	尺寸/nm	個數	面密度/μm^-2	表層與次表層抑制劑尺寸之差/nm
A(低溫)	45	925	2.49	29.7	842	2.27	15.3
B(高溫)	52.2	849	2.29	47.6	343	0.92	4.6
C(低溫)	60.4	697	1.88	39.9	461	1.24	20.3
D(低溫)	54.5	845	2.28	38.8	384	1.03	15.7
E(高溫)	69.2	319	0.86	66.9	216	0.58	2.3

下載: 導出CSV

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