鹵化物鈣鈦礦量子點0D-2D混合維度異質結構光探測器的研究進展及挑戰

康卓; 吳華林; 司浩楠; 張躍

doi:10.13374/j.issn2095-9389.2019.03.001

鹵化物鈣鈦礦量子點0D-2D混合維度異質結構光探測器的研究進展及挑戰

doi: 10.13374/j.issn2095-9389.2019.03.001

康卓¹,
吳華林¹,
司浩楠¹,
張躍^{1, 2, ,}

1.
北京科技大學材料科學與工程學院, 北京 100083
2.
北京市新能源材料與納米技術重點實驗室, 北京 100083

基金項目:

國家重點研究開發計劃資助項目 2016YFA0202701

國家自然科學基金資助項目 51527802

國家自然科學基金資助項目 51232001

國家自然科學基金資助項目 51702014

國家自然科學基金資助項目 51372020

國家自然科學基金資助項目 51602020

中央高校基本科研業務費資助項目 FRF-AS-17-002

詳細信息

通訊作者:
張躍, E-mail: yuezhang@ustb.edu.cn

中圖分類號: TB34
計量
- 文章訪問數: 1947
- HTML全文瀏覽量: 874
- PDF下載量: 80
- 被引次數: 0
出版歷程
- 收稿日期: 2018-12-11
- 刊出日期: 2019-03-20

Halide perovskite quantum dot based 0D-2D mixed-dimensional heterostructure photodetectors: progress and challenges

KANG Zhuo¹,
WU Hua-lin¹,
SI Hao-nan¹,
ZHANG Yue^{1, 2
, ,}

1.
School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
2.
Beijing Municipal Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, China

More Information

Corresponding author: ZHANG Yue, E-mail: yuezhang@ustb.edu.cn

摘要

摘要: 綜述了多晶鹵化物鈣鈦礦薄膜的局限性, 鹵化物鈣鈦礦量子點的基本光學性質和制備方法, 以及在光電探測器方面的器件結構研究進展, 并重點介紹了應用在0D-2D混合維度異質結基光電晶體管器件的突破, 包括界面載流子行為和高性能光探測器的構建.最后, 總結了鹵化物鈣鈦礦量子點作為未來商業化應用的光電子器件和電子器件的候選材料所面臨的主要問題和挑戰, 譬如化學不穩定性、鉛毒性問題、量子點與其他材料間界面高效電荷傳輸等問題, 并提出了解決思路和方法.這為設計和推進高性能、高穩定性鹵化物鈣鈦礦量子點基光電功能化器件的商業化應用指明了方向.
- 鹵化物鈣鈦礦量子點 /
- 光晶體管 /
- 混合維度異質結 /
- 光探測器 /
- 穩定性
Abstract: Due to various advantages such as outstanding light absorption coefficient, long charge carrier diffusion distance, simple synthesis method, and low cost, halide perovskite materials, which are light absorption materials, are widely considered as promising candidates for next-generation electronic and optoelectronic devices such as solar cell, light-emitting diode, photodetector, laser device, X-ray imaging, and information storage devices. Particularly, since the introduction of halide perovskite-based solar cells in 2009, their solar conversion efficiency has increased from 3.8% to 23%, which is almost equal to that of commercial silicon cells, in less than ten years. However, the low phase stability, ion migration-induced hysteresis phenomena, and performance degradation significantly impede the further commercial application development of halide perovskite-based materials. Most recently, more attention has been paid to the zero-dimensional (0D) halide perovskite quantum dots (QDs) as compared to polycrystalline perovskite films because of their unique optical and electrical properties such as high crystalline quality and defect tolerance, flexible composition, quantum confinement effect, and geometric anisotropy. This paper summarized the limitations of the polycrystalline perovskite films and reviewed the intrinsic optical properties and detailed synthesis methods of halide perovskite QDs as well as their applications in optoelectronic devices. Specifically, the recent breakthrough on 0D-2D mixed-dimensional van der Waals phototransistors was systematically introduced. In addition, some perspectives of mixed-dimensional van der Waals phototransistors, which include interfacial charge carrier behavior modulation and subsequent construction of high performance photosensing device, were highlighted, and the corresponding scientific issues and challenges were discussed as well. Such comprehensive review is expected to be helpful for understanding and solving current issues faced in this research field; thus, it will effectively guide the evolution of the halide perovskite quantum dot materials and the development of perovskite-based next-generation optoelectronic devices in future.
- halide perovskite quantum dot /
- phototransistor /
- mixed-dimensional heterostructure /
- photodetector /
- stability

HTML全文

圖 1 多晶鈣鈦礦薄膜基本結構及其局限性. (a) 典型鈣鈦礦結構; (b) 平面鈣鈦礦光伏結構; (c) 器件在正向極化和反向極化下的光電流; (d) 碘空位(V_I) 和(e) 甲胺空位(V_MA) 遷移路徑; (f) 鈣鈦礦薄膜的原子力顯微鏡形貌; 導電原子力顯微鏡測得鈣鈦礦晶界電流(g) 和晶粒內電流(h)

Figure 1. Typical structure and limitations of polycrystalline perovskite thin films: (a) typical perovskite crystal structure; (b) schematic of the lateral structure photovoltaic devices; (c) hysteresis of photocurrents under negative and positive poling; defects diffusion or ion migration paths for vacan-cies V_I (d) and V_MA (e); (f) AFM topography image of the perovskite film; local current measured in grain boundary (g) and grain (h) in Fig. (f)

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圖 2 鈣鈦礦量子點的制備方法及帶隙可調. (a) 配體輔助沉淀法; (b) 熱注入法; (c) 模板法; (d) 發光峰位可調

Figure 2. Methods of perovskite nanodots synthesis: (a) ligand-assisted reprecipitation; (b) hot injection; (c) SiO₂mesoporous template; (d) bandgap tunability

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圖 3 (a) 平面MSM結構的CsPbBr₃納米薄膜光探測器; (b) CsPbBr₃納米薄膜光探測器的I-V曲線; (c) CsPbX₃量子點在日光和UV光照下的照片及與Si納米線形成異質結結構示意圖; (d) CsPbX₃量子點/Si納米線的吸收譜和在300 nm和510 nm處的吸收強度分布

Figure 3. (a) Schematic of device construction and carrier transportation; (b) current-voltage (I-V) logarithm curves of the photodetector under dif-ferent powers; (c) images of the CsPbX₃ QDs solution illuminated under sunlight/UV light and a 3D schematic illustration of the junction structure constructed upon SiNWs; (d) normalized PL and absorption spectra of CsPbBr₃ QDs, with a simulation distribution profile of absorption intensity at300 nm and 510 nm

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圖 4 鈣鈦礦基光電場效應晶體管器件. (a) MAPbI₃鈣鈦礦薄膜光電晶體管示意圖; (b) 鈣鈦礦薄膜的原子力顯微鏡形貌, 插圖為3D形貌結構圖; (c) 鈣鈦礦光電晶體管的光響應性能; (d) 鈣鈦礦/CNTs復合結構中的電荷傳輸示意圖; (e) 鈣鈦礦/CNTs光電晶體管結構示意圖; (f) 輸出特性曲線; (g) 鈣鈦礦/石墨烯光電晶體管結構示意圖; (h) 光響應和外量子效率; (i) CsPbBr₃/Mo S₂混合光電晶體管結構示意圖

Figure 4. Perovskite-based photoelectric field effect transistor devices: (a) schematic of the MAPb I₃phototransistor; (b) AFM height image and the corresponding 3D topographic image of the perovskite fllm; (c) photoresponsivity of the perovskite phototransistor; (d) schematic of the fast carrier transport in perovskite/CNTs hybrid structure; (e) schematic of the perovskite/CNTs phototransistor; (f) output characteristics; (g) schematic of the perovskite-graphene hybrid phototransistor; (h) photoresponsivity (R) and external quantum efflciency (EQE) characteristics of the device; (i) schematic of the CsPbBr₃/Mo S₂hybrid structure

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圖 5 0D-2D混合維度范德華異質結中界面電荷行為調控和表征. (a) 兩種鈣鈦礦量子點/Mo S₂0D-2D混合維度異質結示意圖; (b) 兩種異質結的時間分辨光致發光譜; Type-Ⅰ (c) 和type-Ⅱ (d) 異質結中的熒光強度及熒光壽命成像; (e) 鈣鈦礦量子點/Mo S₂混合維度光電晶體管示意圖; (f) Type-Ⅱ型光電晶體管在不同光功率下的轉移特性曲線, 插圖為閾值電壓變化值隨功率變化關系; (g) 不同功率下光響應性能曲線

Figure 5. Interfacial charge behavior modulation and characterization in the 0D-2D mixed-dimensional van der Waals heterostructures (MvdWHs) : (a) schematic model of the two types of perovskite quantum dots-monolayer Mo S₂0D-2D MvdWHs; (b) time-resolved photoluminescence spectroscopy; Fluorescence intensity and fluorescence lifetime mapping of images for type-Ⅰ (c) and type-Ⅱ (d) Mvd WHs excited by 483 nm laser; (e) schematic model of the phototransistor devices with an optical image in its inset; (f) transfer curves for the type-ⅡMvdWH-based phototransistor at different il-lumination powers, inset showing the shift of the threshold voltage vs effcient illumination powers; (g) responsivity (R) at each gate voltage vs effcient illumination powers

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圖 6 0D-2D混合維度光電晶體管型光探測器. (a) CsPbBr_3-xI_x納米晶-石墨烯混合光電晶體管示意圖; (b) 光照下的能帶結構示意圖; (c) CsPbBr_3-xI_x納米晶-石墨烯混合光電晶體管轉移特性曲線; (d) 全無機鈣鈦礦量子點-Mo S₂混合光電晶體管示意圖; (e) 異質結的熒光壽命成像圖; (f) 時間分辨光致發光譜; (g) 閾值電壓改變值隨功率變化關系; (h) 開態下(柵壓V_G > 閾值電壓V_t) 溝道電流傳輸機制及能帶結構示意圖; (i) 不同功率下器件的光響應度、探測極限及外量子效率

Figure 6. Photodetectors based on 0D-2D mixed-dimensional phototransistor: (a) schematic model of the CsPbBr_3-xI_x NCs-graphene phototransistor; (b) energy diagrams of the CsPbBr_3-xI_x NCs-graphene heterostructure under illumination; (c) transfer curve for the CsPbBr_3-xI_x NCs-graphene phototransistor; (d) schematic of the all-inorganic perovskite CsPbI_3-xBr_x QDs-MoS₂monolayer mixed-dimensional phototransistor; (e) fluorescence lifetime image mapping of the mixed-dimensional herterostructure; (f) time-resolved photoluminescence spectroscopy of the mixed-dimensional herterostructure; (g) shift of the threshold voltage (ΔV_th) as a function of effective illumination power; (h) schematic illustration of the channel current transport mechanism and energy band diagram of the phototransistor at on-state (V_G > V_t); (i) responsivity (R) and specific detectivity (D^*), with an inset showing the EQE as a function of illumination power

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