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摘要: 采用真空熔煉法, 經急冷和緩冷兩種不同冷卻條件制備了Te系化合物TeAsGeSi合金粉體.通過X射線衍射分析, 急冷工藝制備粉體呈非晶態, 緩冷工藝制備的粉體呈晶態, 結晶主相為R-3m空間群的As2GeTe4; 差熱-熱重分析顯示, 升溫至350℃時緩冷粉體As2GeTe4成分熔融, 400℃時兩種粉體均開始快速失重, 為避免制備過程中發生材料熔融及揮發損失, 確定燒結溫度不超過340℃.采用真空熱壓法制備TeAsGeSi合金靶材, 將兩種粉體分別升溫至340℃, 加壓20 MPa, 保溫2 h制備出兩種靶材, 其中緩冷粉體制備的靶材致密度高, 為5. 46 g·cm-3, 達混合理論密度的99. 5%, 形貌表征顯示此靶材表面平整, 孔洞少, 元素分布均勻.Abstract: When a certain threshold switching voltage is applied to a semiconductor of Te-based compound in a high-impedance amorphous state, the semiconductor transits into a low-resistance state, and the resistance difference is more than five orders of magnitude. Therefore, TeAsGeSi material can be prepared as a threshold switch and used in the form of a thin film in a phase-change memory and other elements to improve the performance of such elements. There are few studies on the preparation of such targets, and the key technologies have been monopolized. In this study, the powder difference was taken as the basis to study the target material preparation process of this material in order to prepare a target with high density and uniform composition. Two kinds of TeAsGeSi alloy powders were prepared by vacuum melting under different cooling conditions: quenching and slow cooling. The X-ray diffraction (XRD) analysis shows that the powder prepared by rapid cooling is amorphous, while the powder prepared by slow cooling process is crystalline, and the main crystal phase is As 2GeTe4. The differential scanning calorimetry and thermogravimetry (DSC-TG) curves of the two powders shows that the powders begin to lose weight quickly at 400 ℃, and the slowly cooled powder melts at 350 ℃. As a result, the sintering temperature must not exceed 340 ℃. The TeAsGeSi alloy target was prepared by vacuum hot pressing. The two powders were incubated at 340 ℃ for 2 h and 20 MPa to prepare two targets. The target material prepared by the slowly cooled powder has a high density of 5. 46 g·cm-3, reaching 99. 5% of the theoretical density. The morphological characterization shows that the target has a smooth surface with few holes and uniform distribution of elements, and this target can produce high-performance thin films.
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Key words:
- chalcogenide amorphous /
- powder /
- target /
- TeAsGeSi /
- densification
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圖 1 Te As Ge Si材料靶材制備工藝路線
Figure 1. Preparation process of Te As Ge Si material target
圖 3 粉體DSC-TG曲線. (a) 方案一; (b) 方案二
Figure 3. DSC-TG analysis of raw material powder: (a) scheme 1; (b) scheme 2
圖 4 靶材電子顯微鏡下形貌. (a) 方案一; (b) 方案二
Figure 4. Morphology of target: (a) scheme 1; (b) scheme 2
圖 5 靶材成分面掃描. (a) 方案一; (b) 方案二
Figure 5. Scanning of target surface: (a) scheme 1; (b) scheme 2
表 1 原料粉體及靶材ICP-MS分析結果
Table 1. Results of ICP-MS analysis of raw powder and target
元素 原子數分數/% 目標含量 方案一粉體 方案一靶材 方案二粉體 方案二靶材 Te 33 33.15 34.76 33.04 33.97 As 40.5 40.25 37.43 40.45 38.68 Ge 8 7.93 8.17 7.96 8.09 Si 18.5 18.67 19.63 18.55 19.26 
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