Effect of different buffer layers on the property of Ni81Fe19 thin films and microstructure analysis
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摘要: 采用磁控濺射方法制備分別以Ta和NiFeCr為緩沖層的Ta(NiFeCr)/NiFe/Ta薄膜材料.對于相同厚度的NiFe薄膜,與傳統材料Ta相比,用NiFeCr作緩沖層薄膜的各向異性磁電阻有顯著的提高.X射線衍射結果表明,與Ta緩沖層相比NiFeCr緩沖層可以誘導更強的NiFe(111)織構.高分辨透射電子顯微鏡結果表明,NiFeCr緩沖層和NiFe層的晶格匹配非常好,NiFe沿著NiFeCr外延生長,以NiFeCr為緩沖層的NiFe薄膜具有良好的晶體結構.對薄膜進行熱處理,以NiFeCr緩沖層為緩沖薄膜的各向異性磁電阻值在350℃以下基本保持不變,當退火溫度超過350℃后,其值會明顯下降.以NiFeCr緩沖層的薄膜在350℃以下退火具有良好的熱穩定性.Abstract: Ta(NiFeCr)/NiFe/Ta films with Ta and NiFeCr buffer layers were prepared by magnetic sputtering. In comparison with Ta buffer layers the anisotropic magnetoresistance (AMR) values of the films with NiFeCr buffer layers increase dramatically for the same NiFe thickness. X-ray diffraction results show that the NiFeCr buffer layer promotes the formation of a stronger (111) texture in the NiFe films. High resolution transmission electron microscopy results show that the lattices of the NiFeCr buffer layer and the NiFe layer match well and the NiFe layer grows epitaxially along the direction of NiFeCr crystallites, so the films with NiFeCr buffer layers have a good crystal structure. After the films were annealed, the AMR values of the films with NiFeCr buffer layers keep constant when the temperature is below 350℃ and then decreases dramatically with a further increase of temperature. The films also have a good thermal stability after heat treatment at a temperature below 350℃.
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Key words:
- permalloy /
- thin films /
- buffer layers /
- magnetoresistance /
- microstructure /
- magnetron sputtering
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