Material removal characteristic of silicon wafers in chemical mechanical polishing
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摘要: 根據化學機械拋光(CMP)過程中硅片表面材料的磨損行為,建立了硅片CMP時的材料去除率模型,設計了不同成分的拋光液并進行了材料去除率實驗,得出了機械、化學及其交互作用所引起的材料去除率.結果表明,磨粒的機械作用是化學機械拋光中的主要機械作用,磨粒的機械作用與拋光液的化學作用交互引起的材料去除率是主要的材料去除率.Abstract: A material removal rate (MRR) model of silicon wafers was built based on friction and abrasion behaviors in wafer chemical mechanical polishing (CMP). Different slurries were designed for CMP tests of MRR. MRR results were obtained from the mechanical action of abrasives, the chemical action of slurry, and the interaction action between them. From the results it is concluded that the mechanical action produced by abrasives is the main mechanical action in wafer CMP process, and the MRR is mainly produced by the interaction between the mechanical action and the chemical action.
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