TBCCO/LAO高溫超導薄膜的電阻轉變和各向異性

史力斌; 鄭巖; 任駿原; 張國華

doi:10.13374/j.issn1001-053x.2008.08.020

留言板

尊敬的讀者、作者、審稿人, 關于本刊的投稿、審稿、編輯和出版的任何問題, 您可以本頁添加留言。我們將盡快給您答復。謝謝您的支持!

姓名

郵箱

手機號碼

標題

留言內容

驗證碼

TBCCO/LAO高溫超導薄膜的電阻轉變和各向異性

doi: 10.13374/j.issn1001-053x.2008.08.020

1. 渤海大學物理系, 錦州 121000;
2. 北京科技大學應用科學學院, 北京 100083

詳細信息

作者簡介:
史力斌(1970-),男,副教授,博士,E-mail:slb0813@sohu.com

中圖分類號: TB383;O511⁺.4
計量
- 文章訪問數: 171
- HTML全文瀏覽量: 42
- PDF下載量: 5
- 被引次數: 0
出版歷程
- 收稿日期: 2007-09-04
- 修回日期: 2007-11-15
- 網絡出版日期: 2021-08-06

Resistance transition and anisotropy of TBCCO/LAO high temperature superconducting thin films

1. Department of Physics, Bohai University, Jinzhou 121000, China;
2. School of Applied Science, University of Science and Technology Beijing, Beijing 100083, China

摘要

摘要: 將Tl₂Ba₂CaCu₂O₈(TBCCO)高溫超導薄膜通過磁控濺射的方法沉積到LaAlO₃(LAO)襯底上,SEM和XRD的測量結果顯示該超導薄膜具有很高的成膜品質.通過標準四引線方法對TBCCO/LAO高溫超導薄膜在不同磁場下的電阻轉變進行了研究.結果表明:在一定的磁場下TBCCO/LAO超導薄膜具有很強的電阻轉變展寬現象,并且當磁場垂直于超導薄膜表面時該超導薄膜顯示出更強的電阻轉變展寬現象.用熱激活輔助磁通流動理論對該超導薄膜的電阻轉變展寬現象進行了解釋,同時通過分析超導薄膜的電阻轉變對該超導薄膜的各向異性進行了討論.
- 超導薄膜 /
- Tl₂Ba₂CaCu₂O₈ /
- 電阻轉變 /
- 各向異性 /
- 磁控濺射
Abstract: Tl₂Ba₂CaCu₂O₈(TBCCO) films were deposited on LaAlO₃ (LAO) substrates by magnetron sputtering. The results of SEM and XRD show the films have high quality. The resistive transitions of the TBCCO/LAO were investigated at different magnetic fields using a standard four-probe method. The resistive transition broadening of TBCCO/LAO can be seen and it is stronger with the magnetic field perpendicular to the films than with the magnetic field parallel to the films. The thermally activated flux flow theory was used for analyzing the resistive transition broadening. The anisotropy of the films was discussed by analyzing the resistive transition.
- superconducting films /
- Tl₂Ba₂CaCu₂O₈ /
- resistive transition /
- anisotropy /
- magnetron sputtering