改善AMR薄膜磁電阻傳感器線性度的幾種方法

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改善AMR薄膜磁電阻傳感器線性度的幾種方法

文章導航 > 工程科學學報 > 2006 > 28(8): 744-749

王立錦. 改善AMR薄膜磁電阻傳感器線性度的幾種方法[J]. 工程科學學報, 2006, 28(8): 744-749. doi: 10.13374/j.issn1001-053x.2006.08.008

引用本文:

王立錦. 改善AMR薄膜磁電阻傳感器線性度的幾種方法[J]. 工程科學學報, 2006, 28(8): 744-749. doi: 10.13374/j.issn1001-053x.2006.08.008

WANG Lijin. Several methods to improve the linearity of AMR sensors[J]. Chinese Journal of Engineering, 2006, 28(8): 744-749. doi: 10.13374/j.issn1001-053x.2006.08.008

Citation:

WANG Lijin. Several methods to improve the linearity of AMR sensors[J]. Chinese Journal of Engineering, 2006, 28(8): 744-749. doi: 10.13374/j.issn1001-053x.2006.08.008

王立錦. 改善AMR薄膜磁電阻傳感器線性度的幾種方法[J]. 工程科學學報, 2006, 28(8): 744-749. doi: 10.13374/j.issn1001-053x.2006.08.008

引用本文:

王立錦. 改善AMR薄膜磁電阻傳感器線性度的幾種方法[J]. 工程科學學報, 2006, 28(8): 744-749. doi: 10.13374/j.issn1001-053x.2006.08.008

WANG Lijin. Several methods to improve the linearity of AMR sensors[J]. Chinese Journal of Engineering, 2006, 28(8): 744-749. doi: 10.13374/j.issn1001-053x.2006.08.008

Citation:

WANG Lijin. Several methods to improve the linearity of AMR sensors[J]. Chinese Journal of Engineering, 2006, 28(8): 744-749. doi: 10.13374/j.issn1001-053x.2006.08.008

改善AMR薄膜磁電阻傳感器線性度的幾種方法

doi: 10.13374/j.issn1001-053x.2006.08.008

王立錦

北京科技大學材料科學與工程學院, 北京 100083

基金項目:

國家高技術研究"863計劃"資助項目(No.2003AA325010)

作者簡介:
王立錦(1963-),男,副教授,博士研究生

中圖分類號: O484.4⁺2;TM271⁺.2
計量
- 文章訪問數: 269
- HTML全文瀏覽量: 89
- PDF下載量: 6
- 被引次數: 0
出版歷程
- 收稿日期: 2005-05-30
- 修回日期: 2005-09-15
- 網絡出版日期: 2021-08-24

Several methods to improve the linearity of AMR sensors

WANG Lijin

Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China

摘要: 在分析金屬薄膜磁電阻傳感器非線性產生原因的基礎上,提出了幾種設計AMR(各向異性磁電阻)薄膜磁電阻傳感器時改善其線性度的方法.用直流磁控濺射方法制備了Ni₈₀Fe₂₀和Ni₆₅Co₃₅AMR薄膜材料;用微加工工藝制做出了幾種AMR傳感器元件,并給出了測試結果.
- 金屬薄膜 /
- 各向異性磁電阻效應 /
- 傳感器 /
- 線性度 /
- 微加工
Abstract: Several methods to improve the linearity of anisotropic magnetoresistance (AMR) sensors were suggested based on the analysis of the generation of nonlinearity in magnetoresistive sensors of metallic films. Ni₈₀Fe₂₀ and Ni₆₅Co₃₅ AMR thin films were prepared by DC magnetic sputtering. Some AMR sensors were made by the micro-fabrication technique, and the testing results were also presented.
- metallic films /
- anisotropic magnetoresistance effects /
- sensor /
- linearity /
- microfabrication

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PDF下載量: 6
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