氮化燒成后硅在剛玉氮化硅材料中的賦存形態

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氮化燒成后硅在剛玉氮化硅材料中的賦存形態

涂軍波, 孫加林, 洪彥若

文章導航 > 工程科學學報 > 2005 > 27(3): 317-320

涂軍波, 孫加林, 洪彥若. 氮化燒成后硅在剛玉氮化硅材料中的賦存形態[J]. 工程科學學報, 2005, 27(3): 317-320. doi: 10.13374/j.issn1001-053x.2005.03.015

引用本文:

涂軍波, 孫加林, 洪彥若. 氮化燒成后硅在剛玉氮化硅材料中的賦存形態[J]. 工程科學學報, 2005, 27(3): 317-320. doi: 10.13374/j.issn1001-053x.2005.03.015

TU Junbo, SUN Jialin, HONG Yanruo. Morphology of silicon in corundum silicon-nitride composites after nitridation[J]. Chinese Journal of Engineering, 2005, 27(3): 317-320. doi: 10.13374/j.issn1001-053x.2005.03.015

Citation:

TU Junbo, SUN Jialin, HONG Yanruo. Morphology of silicon in corundum silicon-nitride composites after nitridation[J]. Chinese Journal of Engineering, 2005, 27(3): 317-320. doi: 10.13374/j.issn1001-053x.2005.03.015

涂軍波, 孫加林, 洪彥若. 氮化燒成后硅在剛玉氮化硅材料中的賦存形態[J]. 工程科學學報, 2005, 27(3): 317-320. doi: 10.13374/j.issn1001-053x.2005.03.015

引用本文:

涂軍波, 孫加林, 洪彥若. 氮化燒成后硅在剛玉氮化硅材料中的賦存形態[J]. 工程科學學報, 2005, 27(3): 317-320. doi: 10.13374/j.issn1001-053x.2005.03.015

TU Junbo, SUN Jialin, HONG Yanruo. Morphology of silicon in corundum silicon-nitride composites after nitridation[J]. Chinese Journal of Engineering, 2005, 27(3): 317-320. doi: 10.13374/j.issn1001-053x.2005.03.015

Citation:

TU Junbo, SUN Jialin, HONG Yanruo. Morphology of silicon in corundum silicon-nitride composites after nitridation[J]. Chinese Journal of Engineering, 2005, 27(3): 317-320. doi: 10.13374/j.issn1001-053x.2005.03.015

氮化燒成后硅在剛玉氮化硅材料中的賦存形態

doi: 10.13374/j.issn1001-053x.2005.03.015

1. 北京科技大學材料科學與工程學院, 北京 100083;
2. 河北理工大學材料學院, 唐山 063009

基金項目:

國家自然科學基金資助項目(No.50172007

No.50332010)

作者簡介:
涂軍波(1971-),男,講師,博士研究生

中圖分類號: T175
計量
- 文章訪問數: 140
- HTML全文瀏覽量: 27
- PDF下載量: 6
- 被引次數: 0
出版歷程
- 收稿日期: 2004-04-30
- 修回日期: 2004-09-20
- 網絡出版日期: 2021-08-17

Morphology of silicon in corundum silicon-nitride composites after nitridation

1. Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China;
2. College of Materials, Hebei Polytechnic University, Tangshan 063009, China

摘要: 研究了不同溫度氮化燒成后,硅在剛玉氮化硅材料中的賦存形態.結果表明:1300℃氮化后,硅的外層包裹著絮狀的0'-Sialon;1400℃時,硅顆粒破裂且內部有氮化硅生成; 1500℃時,已沒有殘留硅保留下來,硅氮化生成了0'-Sialon和氮化硅;1600℃時,硅氮化完全,其中的雜質相CaO,Fe₂O₃等富集在一起.
- 硅 /
- 剛玉氮化硅 /
- 氮化 /
- 賦存形態
Abstract: The morphology of silicon was studied in corundum silicon-nitride composites after nitridation at different temperatures. The results showed that silicon was wrapped by flocculant O'-Sialon at 1300℃. Silicon grains were broken and silicon nitride formed inside the grains at 1400℃. All silicon was nitrided into O'-Sialon or silicon nitride without any silicon left at 1500℃. Impurities from silicon such as CaO, Fe₂O₃ were aggregated at 1600℃.
- silicon /
- corundum-silicon nitride /
- nitridation /
- morphology

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文章訪問數: 140
HTML全文瀏覽量: 27
PDF下載量: 6
被引次數: 0

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