SiO<sub>2</sub>/Ta界面反應及其對Cu擴散的影響

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SiO₂/Ta界面反應及其對Cu擴散的影響

龍世兵, 馬紀東, 于廣華, 趙洪辰, 朱逢吾, 張國海, 夏洋

文章導航 > 工程科學學報 > 2003 > 25(1): 33-35

龍世兵, 馬紀東, 于廣華, 趙洪辰, 朱逢吾, 張國海, 夏洋. SiO2/Ta界面反應及其對Cu擴散的影響[J]. 工程科學學報, 2003, 25(1): 33-35. doi: 10.13374/j.issn1001-053x.2003.01.010

引用本文:

龍世兵, 馬紀東, 于廣華, 趙洪辰, 朱逢吾, 張國海, 夏洋. SiO₂/Ta界面反應及其對Cu擴散的影響[J]. 工程科學學報, 2003, 25(1): 33-35. doi: 10.13374/j.issn1001-053x.2003.01.010

LONG Shibing, MA Jidong, YU Guanghua, ZHAO Hongchen, ZHU Fengwu, ZHANG Guohai, XIA Yang. Reaction of the SiO2/Ta Interface and its Influence on Cu Diffusion[J]. Chinese Journal of Engineering, 2003, 25(1): 33-35. doi: 10.13374/j.issn1001-053x.2003.01.010

Citation:

LONG Shibing, MA Jidong, YU Guanghua, ZHAO Hongchen, ZHU Fengwu, ZHANG Guohai, XIA Yang. Reaction of the SiO₂/Ta Interface and its Influence on Cu Diffusion[J]. Chinese Journal of Engineering, 2003, 25(1): 33-35. doi: 10.13374/j.issn1001-053x.2003.01.010

龍世兵, 馬紀東, 于廣華, 趙洪辰, 朱逢吾, 張國海, 夏洋. SiO2/Ta界面反應及其對Cu擴散的影響[J]. 工程科學學報, 2003, 25(1): 33-35. doi: 10.13374/j.issn1001-053x.2003.01.010

引用本文:

龍世兵, 馬紀東, 于廣華, 趙洪辰, 朱逢吾, 張國海, 夏洋. SiO₂/Ta界面反應及其對Cu擴散的影響[J]. 工程科學學報, 2003, 25(1): 33-35. doi: 10.13374/j.issn1001-053x.2003.01.010

LONG Shibing, MA Jidong, YU Guanghua, ZHAO Hongchen, ZHU Fengwu, ZHANG Guohai, XIA Yang. Reaction of the SiO2/Ta Interface and its Influence on Cu Diffusion[J]. Chinese Journal of Engineering, 2003, 25(1): 33-35. doi: 10.13374/j.issn1001-053x.2003.01.010

Citation:

LONG Shibing, MA Jidong, YU Guanghua, ZHAO Hongchen, ZHU Fengwu, ZHANG Guohai, XIA Yang. Reaction of the SiO₂/Ta Interface and its Influence on Cu Diffusion[J]. Chinese Journal of Engineering, 2003, 25(1): 33-35. doi: 10.13374/j.issn1001-053x.2003.01.010

SiO₂/Ta界面反應及其對Cu擴散的影響

doi: 10.13374/j.issn1001-053x.2003.01.010

1. 北京科技大學材料物理系, 北京 100083;
2. 中國科學院微電子中心, 北京 100029

基金項目:

國家自然科學基金資助項目(No.19890310)

作者簡介:
龍世兵男,25歲,碩士生

中圖分類號: TB383
計量
- 文章訪問數: 156
- HTML全文瀏覽量: 28
- PDF下載量: 7
- 被引次數: 0
出版歷程
- 收稿日期: 2002-01-03
- 網絡出版日期: 2021-08-17

Reaction of the SiO₂/Ta Interface and its Influence on Cu Diffusion

1. Department of Materials Physics, University of Science and Technology Beijing, Beijing 100083, China;
2. Microelectronic Research & Development Center, The Chinese Academy of Sciences, Beijing 100029, China

摘要: 利用磁控濺射方法在表面有SiO₂層的Si基片上濺射Ta薄膜,采用X射線光電子能譜研究了SiO₂/Ta界面以及Ta₅Si₃標準樣品,并進行計算機譜圖擬合分析.實驗結果表明在制備態下在SiO₂/Ta界面處有更穩定的化合物新相Ta₅Si₃和Ta₂O₅生成.在采用Ta作阻擋層的ULSI銅互連結構中這些反應產物可能有利于對Cu擴散的阻擋.
- Cu互連 /
- 擴散阻擋層 /
- 界面反應 /
- X射線光電子能譜
Abstract: Ta films were deposited on Si substrates precoated with SiO₂ by magnetron sputtering. The SiO₂/Ta interface and the Ta₅Si₃ standard sample were investigated by X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is a thermodynamically favorable reaction at the SiO₂/Ta interface. The more stable products Ta₅Si₃ and Ta₂O₅ may be beneficial to stop the diffusion of Cu into SiO₂.
- copper interconnection /
- diffusion barrier /
- interface reaction /
- X-ray photoelectron spectroscopy

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文章訪問數: 156
HTML全文瀏覽量: 28
PDF下載量: 7
被引次數: 0

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