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NiO釘扎的自旋閥的結構和磁性

柴春林,  滕蛟,  于廣華,  姜文博,  朱逢吾,  賴武彥

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文章導航 > 工程科學學報  > 2000 >  22(1): 49-51
柴春林, 滕蛟, 于廣華, 姜文博, 朱逢吾, 賴武彥. NiO釘扎的自旋閥的結構和磁性[J]. 工程科學學報, 2000, 22(1): 49-51. doi: 10.13374/j.issn1001-053x.2000.01.038
引用本文: 柴春林, 滕蛟, 于廣華, 姜文博, 朱逢吾, 賴武彥. NiO釘扎的自旋閥的結構和磁性[J]. 工程科學學報, 2000, 22(1): 49-51. doi: 10.13374/j.issn1001-053x.2000.01.038
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CHAI Chunlin, TENG Jiao, YU Guanghua, JIANG Wenbo, ZHU Fengwu, LAI Wuyan. Structure and Magnetism in NiO Spin-valve[J]. Chinese Journal of Engineering, 2000, 22(1): 49-51. doi: 10.13374/j.issn1001-053x.2000.01.038
Citation: CHAI Chunlin, TENG Jiao, YU Guanghua, JIANG Wenbo, ZHU Fengwu, LAI Wuyan. Structure and Magnetism in NiO Spin-valve[J]. Chinese Journal of Engineering, 2000, 22(1): 49-51. doi: 10.13374/j.issn1001-053x.2000.01.038
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NiO釘扎的自旋閥的結構和磁性

doi: 10.13374/j.issn1001-053x.2000.01.038

  • 1. 北京科技大學材料科學與工程學院, 北京 100083;

  • 2. 北京出入境檢驗檢疫局, 北京 100022;

  • 3. 中科院物理所, 北京 100080

基金項目: 

國家自然科學基金(No.980606961)

詳細信息
    作者簡介:

    柴春林,男,28歲,博士生

  • 中圖分類號: TM271

Structure and Magnetism in NiO Spin-valve

  • 1. Material Science and Engineering School, UST Beijing, Beijing 100083, China Beijing;

  • 2. Administration for Entry-Exit Inspection and Quaratine, Beijing 100022, China;

  • 3. Institute of Physics, Chinese Academy of Science, Beijing 100080, China

    摘要
  • 摘要: 利用反應濺射的方法制備了NiO薄膜,并研究了NiO對NiFe薄膜的釘扎作用,結果表明釘扎場與反應濺射時的Ar/O2比例、總的濺射氣壓、基底的粗糙度等有很大關系.利用光電子能譜(XP)分析了NiOx中的Ni,O離子的價態.并制備了NiO釘扎的自旋閥Ta/NiO/NiFe/Cu/NiFe/Ta,其磁電阻(MR)可達到2.2%,釘扎場為10.48kA/m.

     

    Abstract: The exchange fields of NiO/NiFe bilayer have been investigated, and the NiO film is deposited by dc magnetron reactive sputtering.It has been shown that exchange field is relation to the ratio of Ar/O2 (Volume ration), total sputtering pressure and the roughness of substrate.The Ni and O ion in NiOx is analyzed by means of XPS.The spin-vavie Ta/NiO/NiFe/Cu/NiFe/Ta pinned by NiO is deposited, and its magne-toresistance reaches 2.2% and pinning field is 10.48 KA/m.

     

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  • 收稿日期:  1999-11-30

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