Thermal Stability of Spin-valve Multilayers
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摘要: 研究了Si/Ta/NiFe/Cu/NiFe/FeMn/Ta結構的自旋閥的熱穩定性及層間擴散問題.高分辨電鏡(HREM)觀察表明,各層呈柱狀晶生長.低于200℃退火能有效地提高釘扎場.高于200℃退火后,釘扎場下降,300℃時降為零.利用俄歐電子能譜儀(AES)研究了在相同的條件下制備的基片/Ta/NiFe/FeMn/Ta結構多層膜.結果表明,200℃以下時薄膜層之間主要發生沿晶界的擴散,300℃時體擴散的作用不能忽略.Abstract: Thermal stability and interface diffusion of Si/Ta/NiFe/Cu/NiFe/FeMn/Ta spin-valve have been investigated. The columnar grains are observed by high resolution electron microscopy (HREM). The pinning field increases when annealing temperature is lower than 200℃; when the annealing temperature is higher than 200℃, the pinning field decreases and other properties deteriorates; at 300℃ the pinning field will be zero. From the results of Auger electron spectroscopy(AES), it can conclude that the diffusion among layers is mainly along grain boundary when the annealing temperature is lower than 200℃. The effect of bulk diffusion should be considered at 300℃.
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Key words:
- spin-valve /
- thermal stability /
- grain boundary diffusion
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