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基片溫度對直流電弧等離子體噴射沉積金剛石膜的影響

鐘國仿,  申發振,  唐偉忠,  呂反修

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文章導航 > 工程科學學報  > 1999 >  21(4): 353-356
鐘國仿, 申發振, 唐偉忠, 呂反修. 基片溫度對直流電弧等離子體噴射沉積金剛石膜的影響[J]. 工程科學學報, 1999, 21(4): 353-356. doi: 10.13374/j.issn1001-053x.1999.04.010
引用本文: 鐘國仿, 申發振, 唐偉忠, 呂反修. 基片溫度對直流電弧等離子體噴射沉積金剛石膜的影響[J]. 工程科學學報, 1999, 21(4): 353-356. doi: 10.13374/j.issn1001-053x.1999.04.010
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Zhong Guofang, Shen Fazhen, Tang Weizhong, Lu Fanxiu. Effects of Substrate Temperature on Diamond Films Prepared by DC Arc Plasma Jet CVD Method[J]. Chinese Journal of Engineering, 1999, 21(4): 353-356. doi: 10.13374/j.issn1001-053x.1999.04.010
Citation: Zhong Guofang, Shen Fazhen, Tang Weizhong, Lu Fanxiu. Effects of Substrate Temperature on Diamond Films Prepared by DC Arc Plasma Jet CVD Method[J]. Chinese Journal of Engineering, 1999, 21(4): 353-356. doi: 10.13374/j.issn1001-053x.1999.04.010
shu

基片溫度對直流電弧等離子體噴射沉積金剛石膜的影響

doi: 10.13374/j.issn1001-053x.1999.04.010

  • 北京科技大學材料科學與工程學院, 北京 100083

基金項目: 

國家“863”高科技項目(No.863-715-Z38-03)

詳細信息
    作者簡介:

    鐘國仿 男,31歲,博士

  • 中圖分類號: O612.4

Effects of Substrate Temperature on Diamond Films Prepared by DC Arc Plasma Jet CVD Method

  • Material Science and Engineering School, UST Beijing, Beijing 100083, China

    摘要
  • 摘要: 研究直流電弧等離子體噴射化學氣相沉積金剛石膜系統中,基片溫度對金剛石膜生長速率和質量的影響.實驗發現,金剛石膜的生長速率和結晶性隨基片溫度的增加而單調增加,但是金剛石膜中非金剛石碳的質量分數先是隨基片溫度的增加而降低,在1000~1100℃達到最低值以后又開始隨基片溫度的增加而增加.

     

    Abstract: The effects of substrate temperature on the growth rate and quality of diamond films by DC arc plasma jet method were studied. It was found that the growth rate and crystallinity of diamond films increased monotonically with the increase of substrate temperature. However, when the substrate temperature increased from 800℃ to 1200℃, the content of non-diamond carbon co-deposited in the diamond films decreased first, and then increased rapidly after reaching a minimum at 1000~1 100℃.

     

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出版歷程
  • 收稿日期:  1999-01-04
  • 網絡出版日期:  2021-08-27

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