Study of Molecular Beam Epitaxy InAs Multilayers Dots by TEM
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摘要: 報道了利用分子束外延技術在(001)GaAs襯底上生長的單層及多層InAs量子點材料的透射電子顯微鏡(TEM)研究結果,并對量子點的結構特性進行了討論.結果表明:多層量子點呈現明顯的垂直成串排列趨勢;隨著InAs量子點層數的增加,量子點的密度下降,其尺寸隨層數的增加趨向均勻.在試驗條件下,5層量子點材料的InAs量子點厚度和GaAs隔離層的厚度的選擇都比較合理,其生長過程中的應變場更有利于自組織量子的形成.Abstract: Single-and Multi-layer InAs quantum dots grown on (001) GaAs substrates by molecular beam epitaxy (MBE) were studied by transmission electron diffraction (TEM) and the structural properties of the quantum dots were discussed. The results indicated that multi-layer quantum dots are aligned vertically, in addition, the density of the dots decreases and the size of dots becomes uniform when the number of layers increases.In this experiments, the thickness of InAs dots sheets and GaAs space layers in samples with five dots sheets are the best condition to form the strain field needed by growth of self-organized quantum dots.
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Key words:
- molecular beam epitaxy /
- self-organized growth /
- InAs quantum dots
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