加載速率對位錯發射、層錯寬度及位錯速度影響

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加載速率對位錯發射、層錯寬度及位錯速度影響

周國輝, 焦治杰, 武駿, 周富信, 褚武揚

文章導航 > 工程科學學報 > 1999 > 21(1): 26-28

周國輝, 焦治杰, 武駿, 周富信, 褚武揚. 加載速率對位錯發射、層錯寬度及位錯速度影響[J]. 工程科學學報, 1999, 21(1): 26-28. doi: 10.13374/j.issn1001-053x.1999.01.008

引用本文:

周國輝, 焦治杰, 武駿, 周富信, 褚武揚. 加載速率對位錯發射、層錯寬度及位錯速度影響[J]. 工程科學學報, 1999, 21(1): 26-28. doi: 10.13374/j.issn1001-053x.1999.01.008

Zhou Guohui, Jiao Zhijie, Wu Jun, Zhou Fuxin, Chu Wuyang. Influence of Loading Rate on Dislocation Emission, Width of StackingFault and Dislocation Velocity[J]. Chinese Journal of Engineering, 1999, 21(1): 26-28. doi: 10.13374/j.issn1001-053x.1999.01.008

Citation:

Zhou Guohui, Jiao Zhijie, Wu Jun, Zhou Fuxin, Chu Wuyang. Influence of Loading Rate on Dislocation Emission, Width of StackingFault and Dislocation Velocity[J]. Chinese Journal of Engineering, 1999, 21(1): 26-28. doi: 10.13374/j.issn1001-053x.1999.01.008

周國輝, 焦治杰, 武駿, 周富信, 褚武揚. 加載速率對位錯發射、層錯寬度及位錯速度影響[J]. 工程科學學報, 1999, 21(1): 26-28. doi: 10.13374/j.issn1001-053x.1999.01.008

引用本文:

周國輝, 焦治杰, 武駿, 周富信, 褚武揚. 加載速率對位錯發射、層錯寬度及位錯速度影響[J]. 工程科學學報, 1999, 21(1): 26-28. doi: 10.13374/j.issn1001-053x.1999.01.008

Zhou Guohui, Jiao Zhijie, Wu Jun, Zhou Fuxin, Chu Wuyang. Influence of Loading Rate on Dislocation Emission, Width of StackingFault and Dislocation Velocity[J]. Chinese Journal of Engineering, 1999, 21(1): 26-28. doi: 10.13374/j.issn1001-053x.1999.01.008

Citation:

Zhou Guohui, Jiao Zhijie, Wu Jun, Zhou Fuxin, Chu Wuyang. Influence of Loading Rate on Dislocation Emission, Width of StackingFault and Dislocation Velocity[J]. Chinese Journal of Engineering, 1999, 21(1): 26-28. doi: 10.13374/j.issn1001-053x.1999.01.008

加載速率對位錯發射、層錯寬度及位錯速度影響

doi: 10.13374/j.issn1001-053x.1999.01.008

1. 北京科技大學應用科學學院, 100083, 北京;
2. 北京科技大學冶金學院, 100083, 北京;
3. 中科院力學所, 100080, 北京

基金項目:

國家自然科學基金(No.59771051,59871010)

作者簡介:
周國輝男,27歲,博士生

中圖分類號: O772;TG111.2
計量
- 文章訪問數: 285
- HTML全文瀏覽量: 103
- PDF下載量: 10
- 被引次數: 0
出版歷程
- 收稿日期: 1998-01-04
- 網絡出版日期: 2021-08-27

Influence of Loading Rate on Dislocation Emission, Width of StackingFault and Dislocation Velocity

1. Applied Science School, UST Beijing, Beijing 100083, China;
2. Metallurgical School, UST Beijing;
3. Institute of Mechanics, Chinese Academy of Sciences, 100080

摘要: 應用分子動力學方法研究了Cu和Al單晶在Ⅱ型加載條件下,加載速率對位錯發射、層錯寬度W及位錯速度V_d的影響.結果表明,加載速率對W和V_d有顯著影響.隨著加載速率的增大,層錯寬度減小,位錯速度增大.當加載速率達到某一臨界值時,能量不僅以發射位錯的形式釋放,而且形成孿晶,以降低體系的能量.
- 分子動力學 /
- 偏位錯 /
- 位錯分解 /
- Cu /
- Al
Abstract: Cu and Al single crystals with molecular dynamics simulation method was studied.Under mode Ⅱ loading, the influence of loading rate on dislocation emission, width of stacking fault and dislocation velocity was analyzed. The simulated results show that width of stacking fault decreases as loading rate increases, while dislocation velocity increase dramatically.If loading rate is very high, system energy will be released by dislocation emission, the twinning is formed as well.
- molecular dynamics /
- partial dislocation /
- dislocation dissociation /
- Cu /
- Al

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計量

文章訪問數: 285
HTML全文瀏覽量: 103
PDF下載量: 10
被引次數: 0

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