The Kinetics of Chemical Vapor Deposition of Tantalum
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摘要: 應用絕對反應速度理論和統計力學到化學氣相沉積(CVD)鉭上,建立了反應速度模型。實驗表明,測定值與計算值間吻合較好。證實了用絕對反應速度理論建立的速度模型的正確性,而且證實了化學氣相沉積鉭的速度控制環節為表面化學反應。Abstract: Using the theory of absolute reacte rate and statistation mechanics for Chemical vapor deposition (CVD) of tantalum has been Constructed model of Chemical reaction.Experement presented, the agreement between measured and Calculabd data is good The fact seems to prove, rate model which using the absolute reacte rate obtained is correct and the rate-limiting step is the surfacl chemical reaction for Chemical Vapor deposition
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