<th id="5nh9l"></th><strike id="5nh9l"></strike><th id="5nh9l"><noframes id="5nh9l"><th id="5nh9l"></th><strike id="5nh9l"></strike>
<progress id="5nh9l"><noframes id="5nh9l"><th id="5nh9l"><noframes id="5nh9l">
<th id="5nh9l"></th> <strike id="5nh9l"><noframes id="5nh9l"><span id="5nh9l"></span>
<progress id="5nh9l"><noframes id="5nh9l"><span id="5nh9l"><noframes id="5nh9l"><span id="5nh9l"></span><strike id="5nh9l"><noframes id="5nh9l"><strike id="5nh9l"></strike>
<span id="5nh9l"><noframes id="5nh9l">
<span id="5nh9l"><noframes id="5nh9l">
<span id="5nh9l"></span><span id="5nh9l"><video id="5nh9l"></video></span>
<th id="5nh9l"><noframes id="5nh9l"><th id="5nh9l"></th>
<progress id="5nh9l"><noframes id="5nh9l">
Volume 29 Issue 9
Aug.  2021
Turn off MathJax
Article Contents
CHENG Xuequn, LI Xiaogang, DU Cuiwei, YANG Lixia. Electrochemical properties of passivation film formed on 316L stainless steel in acetic acid[J]. Chinese Journal of Engineering, 2007, 29(9): 911-915. doi: 10.13374/j.issn1001-053x.2007.09.042
Citation: CHENG Xuequn, LI Xiaogang, DU Cuiwei, YANG Lixia. Electrochemical properties of passivation film formed on 316L stainless steel in acetic acid[J]. Chinese Journal of Engineering, 2007, 29(9): 911-915. doi: 10.13374/j.issn1001-053x.2007.09.042

Electrochemical properties of passivation film formed on 316L stainless steel in acetic acid

doi: 10.13374/j.issn1001-053x.2007.09.042
  • Received Date: 2006-05-28
  • Rev Recd Date: 2006-09-12
  • Available Online: 2021-08-16
  • The electrochemical properties of passivation film on 316L stainless steel were investigated by electrochemical impedance spectroscopy (EIS), Mott-Schottky analysis and cyclic voltammetry graph under the corresponding conditions. The result shows that passivation film on 316L stainless steel is steady in 60% acetic acid solution from 25℃ to 85℃, the polarization resistance decreased but the interface capacitance increased with increasing temperature. There is no obvious relation between temperature and semiconductor intrinsic properties. The passivation film represents the n-semiconductor characteristic in the potential interval of -0.5-0.1 V, the p-semiconductor characteristic in the potential interval of 0.1-0.9 V, and the n-semiconductor characteristic in the potential interval of 0.9-1.1 V. The graph of cyclic voltammetry shows that when the temperature is lower than 55℃ the passivation film's structure is more steady, when the temperature is 55℃ its stability tends to worsen and when the temperature exceed 55℃ its stability declines.

     

  • loading
  • 加載中

Catalog

    通訊作者: 陳斌, bchen63@163.com
    • 1. 

      沈陽化工大學材料科學與工程學院 沈陽 110142

    1. 本站搜索
    2. 百度學術搜索
    3. 萬方數據庫搜索
    4. CNKI搜索
    Article views (209) PDF downloads(14) Cited by()
    Proportional views
    Related

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return
    <th id="5nh9l"></th><strike id="5nh9l"></strike><th id="5nh9l"><noframes id="5nh9l"><th id="5nh9l"></th><strike id="5nh9l"></strike>
    <progress id="5nh9l"><noframes id="5nh9l"><th id="5nh9l"><noframes id="5nh9l">
    <th id="5nh9l"></th> <strike id="5nh9l"><noframes id="5nh9l"><span id="5nh9l"></span>
    <progress id="5nh9l"><noframes id="5nh9l"><span id="5nh9l"><noframes id="5nh9l"><span id="5nh9l"></span><strike id="5nh9l"><noframes id="5nh9l"><strike id="5nh9l"></strike>
    <span id="5nh9l"><noframes id="5nh9l">
    <span id="5nh9l"><noframes id="5nh9l">
    <span id="5nh9l"></span><span id="5nh9l"><video id="5nh9l"></video></span>
    <th id="5nh9l"><noframes id="5nh9l"><th id="5nh9l"></th>
    <progress id="5nh9l"><noframes id="5nh9l">
    259luxu-164