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Volume 24 Issue 2
Aug.  2021
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Article Contents
AN Xizhong, ZHANG Yu, LIU Guoquan, QIN Xiangge, WANG Fuzhong, LIU Shengxin. Atomic Scale Simulation of {100} Oriented CVD Diamond Film Grown[J]. Chinese Journal of Engineering, 2002, 24(2): 143-148. doi: 10.13374/j.issn1001-053x.2002.02.013
Citation: AN Xizhong, ZHANG Yu, LIU Guoquan, QIN Xiangge, WANG Fuzhong, LIU Shengxin. Atomic Scale Simulation of {100} Oriented CVD Diamond Film Grown[J]. Chinese Journal of Engineering, 2002, 24(2): 143-148. doi: 10.13374/j.issn1001-053x.2002.02.013

Atomic Scale Simulation of {100} Oriented CVD Diamond Film Grown

doi: 10.13374/j.issn1001-053x.2002.02.013
  • Received Date: 2001-12-28
    Available Online: 2021-08-21
  • The growth of {100} oriented CVD diamond film under three different chemical models (Including Harris model, F-B model and model proposed in this paper, respectively) is simulated in atomic scale by using KMC method. The results show that: (1) the growth mechanism from CH3 is suitable for the growth of {100} oriented CVD diamond film; (2) the deposition rate under model containing double-carbon radicals is lower than that under model containing one-carbon radicals for {100} oriented diamond film;(3) the acquisition of diamond film with low surface roughness under relatively high deposition rate is feasible; (4) the simulation results for Harris' model are in well agreement with those predicted by Harris and experiment results.

     

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      沈陽化工大學材料科學與工程學院 沈陽 110142

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