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SiC半導體不同晶面氧化機理及動力學的研究進展

Research progress on the oxidation mechanism and kinetics of a SiC semiconductor with different crystal surfaces

  • 摘要: SiC作為一種綜合性能優異寬禁帶半導體,在金屬氧化物半導體場效應晶體管中具有廣泛的應用。然而SiC熱氧化生成SiO2的過程具有各向異性,導致不同晶面上的氧化速率差異較大,這會對半導體器件的性能產生不利影響,因而研究SiC各個晶面上SiO2的生長規律尤其重要。建立有效合理的動力學模型是認識上述規律的有效手段。本文從反應機理和擬合準確度兩方面對目前具有代表性的改進的Deal-Grove模型(Song模型和Massoud經驗關系式)以及硅碳排放模型(Si?C emission model)進行系統研究和比較。在此基礎上,分析已有模型的優缺點,提出本課題組建立的真實物理動力學模型應用的可能性,為SiC不同晶面氧化動力學的準確描述提供進一步優化和修正思路。

     

    Abstract: In recent years, efficient electrical equipment for reducing energy consumption has drawn increasing worldwide attention. Although silicon (Si) has been used as a power semiconductor device, its improving effect on the performance of power semiconductor devices is greatly limited by its physical characteristics. Compared with Si, silicon carbide (SiC) as a type of wideband gap semiconductor has more excellent comprehensive physical properties in power device applications, including a triple wideband gap, a triple high thermal conductivity, and a tenfold breakdown electric field. Moreover, SiC can form silicon dioxide (SiO2) on the surface through thermal oxidation, which plays an important role in device manufacturing technology as an insulating layer. Based on these properties, SiC has gradually replaced Si as the preferred material of power devices used in metal oxide field-effect transistors (MOSFETs). The structure of a MOSFET contains a polysilicon-oxide layer (mostly SiO2)-SiC or diamond as the core. This structure is exactly equivalent to that of a capacitor, with SiO2 as the dielectric medium in the middle, and the capacitance value is determined by the thickness and dielectric coefficient of SiO2. However, the anisotropic process during the thermal oxidation from SiC to SiO2 results in a large difference in oxidation rate on different crystal faces, which adversely affects the performance of semiconductor devices. Therefore, studying the growth law of SiO2 on each crystal surface of SiC is of vital importance. Effective and reasonable dynamic models are expected to clarify the behavior. In this paper, the representative modified Deal-Grove model (Song model and Massoud empirical relation) and Si?C emission model were researched and compared systematically in terms of the reaction mechanism and fitting accuracy. On this basis, the advantages and disadvantages of the models were analyzed, and the possibility of the application of the real physical picture model established by our research group was proposed, which can further contribute to optimization and modification for the precise description of the oxidation kinetics of SiC on different crystal faces.

     

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