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偽半固態觸變成形制備SiCp/Al電子封裝材料的組織與性能

Microstructure and properties of SiCp/Al electronic packaging materials fabricated by pseudo-semi-solid thixoforming

  • 摘要: 采用偽半固態觸變成形工藝制備了40%、56%和63%三種不同SiC體積分數顆粒增強Al基電子封裝材料,并借助光學顯微鏡和掃描電鏡分析了材料中Al和SiC的形態分布及其斷口形貌,測定了材料的密度、致密度、熱導率、熱膨脹系數、抗壓強度和抗彎強度.結果表明,通過偽半固態觸變成形工藝可制備出的不同SiC體積分數Al基電子封裝材料,其致密度高,熱膨脹系數可控,材料中Al基體相互連接構成網狀,SiC顆粒均勻鑲嵌分布于Al基體中.隨著SiC顆粒體積分數的增加,電子封裝材料密度和室溫下的熱導率稍有增加,熱膨脹系數逐漸減小,室溫下的抗壓強度和抗彎強度逐漸增加.SiC/Al電子封裝材料的斷裂方式為SiC的脆性斷裂,同時伴隨著Al基體的韌性斷裂.

     

    Abstract: SiC particles reinforced Al matrix composites with three different SiC volume fractions of 40%, 56% and 63% for electronic packaging were prepared by pseudo-semi-solid thixoforming. The Al and SiC distribution and the fractographs of the SiCp/Al electronic packaging materials were examined by optical microscopy and scanning electron microscopy. The density, relative density, thermal conductivity (TC), coefficient of thermal expansion (CTE), compressive strength and bending strength of the SiCp/Al electronic packaging materials were tested. It is found that the SiCp/Al electronic packaging materials have controllable coefficients of thermal expansion and high relative density. The Al matrix is connected into a network, and SiC particles are uniformly distributed in the Al matrix. When the SiC volume fraction increases, the density and thermal conductivity at room temperature lightly increase, the coefficient of thermal expansion gradually decreases, and the compressive strength and bending strength increase. The main fracture mode of the SiC/Al electronic packaging materials is brittle fracture of SiC particles accompanied by ductile fracture of the Al matrix at the same time.

     

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