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基底預處理對水熱法制備SnO2納米陣列生長的影響

Effect of substrate pretreatments on the growth of SnO_2 nanowire arrays by hydrothermal method

  • 摘要: 采用水熱法,在磁控濺射鋪膜后的ITO-基底(MST-基底)上制備出取向一致的SnO2納米線陣列.用X射線衍射(XRD)、掃描電子顯微鏡(SEM)、透射電子顯微鏡(TEM)和高分辨透射電子顯微鏡(HRTEM)等手段對制備的納米線陣列進行了表征.考察了不同的基底鋪膜方式和退火溫度對產物形貌、尺寸和取向性的影響.結果表明,不同的基底鋪膜方法對產物的形貌和尺寸有較大的影響:在磁控濺射法鋪膜的基底上生長出SnO2納米線陣列;在旋涂法鋪膜的基底上生長出SnO2納米棒陣列;在未鋪膜基底上生長出SnO2納米顆粒薄膜.另外,退火溫度對生長在磁控濺射鋪膜基底上的產物的取向性有較大的影響,隨著退火溫度的升高,產物的取向性增強.

     

    Abstract: By using a hydrothermal method,well-aligned SnO2 nanowire arrays were prepared on ITO substrates,which were pretreated by a magnetron sputtering method(MST-substrates).The samples were characterized by X-ray diffraction(XRD),field-emission scanning electron microscopy(SEM),transmission electron microscopy(TEM) and high-resolution transmission electron microscopy(HRTEM).The effects of film-coated methods and annealing temperature on the morphology,size and orientation were studied.The results show that the pretreating methods for substrates have great influence on the morphology and size of the samples.The SnO2 nanowire,nanorod,nanoparticle arrays grow on different substrates,which were pretreated with magnetron sputtering,spin-casting methods and unmodified respectively.It is also found that annealing temperature for the pretreated substrates with magnetron sputtering plays a main role in controlling the orientation of SnO2 nanowire arrays.The orientation of SnO2 nanowire arrays is improved by increasing the annealing temperature.

     

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