TBCCO/LAO高溫超導薄膜的電阻轉變和各向異性
Resistance transition and anisotropy of TBCCO/LAO high temperature superconducting thin films
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摘要: 將Tl2Ba2CaCu2O8(TBCCO)高溫超導薄膜通過磁控濺射的方法沉積到LaAlO3(LAO)襯底上,SEM和XRD的測量結果顯示該超導薄膜具有很高的成膜品質.通過標準四引線方法對TBCCO/LAO高溫超導薄膜在不同磁場下的電阻轉變進行了研究.結果表明:在一定的磁場下TBCCO/LAO超導薄膜具有很強的電阻轉變展寬現象,并且當磁場垂直于超導薄膜表面時該超導薄膜顯示出更強的電阻轉變展寬現象.用熱激活輔助磁通流動理論對該超導薄膜的電阻轉變展寬現象進行了解釋,同時通過分析超導薄膜的電阻轉變對該超導薄膜的各向異性進行了討論.Abstract: Tl2Ba2CaCu2O8(TBCCO) films were deposited on LaAlO3 (LAO) substrates by magnetron sputtering. The results of SEM and XRD show the films have high quality. The resistive transitions of the TBCCO/LAO were investigated at different magnetic fields using a standard four-probe method. The resistive transition broadening of TBCCO/LAO can be seen and it is stronger with the magnetic field perpendicular to the films than with the magnetic field parallel to the films. The thermally activated flux flow theory was used for analyzing the resistive transition broadening. The anisotropy of the films was discussed by analyzing the resistive transition.
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