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高溫高壓下Fe-Ni-C-B系合成Ⅱb型金剛石單晶

Synthesizing Ⅱb type diamond single crystal from an Fe-Ni-C-B system at high temperature and high pressure

  • 摘要: 提出了一種在高溫高壓下利用粉末冶金方法制備的Fe-Ni-C-B系觸媒合金生長Ⅱb型金剛石的新方法.由于硼元素的存在,Ⅱb型金剛石生長所需的溫度和壓力條件均高于普通的Ⅰb型金剛石,并且合成出的金剛石單晶粒度較粗,晶形稍差,表面結構比較復雜.通過晶體的顏色、X射線衍射以及Raman光譜可以初步斷定合成出的金剛石晶體中確實含有硼元素.以金剛石在不同溫度下的靜壓強度和沖擊韌性以及差熱分析和熱重分析的結果來表征金剛石的熱穩定性.實驗發現,由于硼元素的進入使得Ⅱb型金剛石單晶的熱穩定性與采用同種方法合成出的Ⅰb型金剛石相比有了較大程度的提高.采用自制的夾具通過檢測金剛石的電阻溫度特性,初步確定了在Fe-Ni-C-B系中生長的Ⅱb型金剛石具有半導體特性.大量的實驗數據充分說明,采用這種方法生產Ⅱb型金剛石具有成本低廉、操作簡單、產品質量穩定等優點,具有極高的工業化推廣應用的價值.

     

    Abstract: A Ⅱb type diamond has semiconductivity and superconductivity as well as better heat resistance, wear and chemical inertia than a common synthetic diamond because of the doping of boron. In order to change the condition of high cost and hard to industrialization on Ⅱb type diamond synthesizing, this paper put forward a new synthesizing method using an Fe-Ni-C-B catalyst alloy made by powder metallurgy at high temperature and high pressure. Because of the presence of boron, a Ⅱb type diamond needs a higher temperature and pressure than a common Ⅰb type diamond. Due to the action of boron, the diamond has rough grain size, bad crystal shape and complex surface structure. The presence of boron was primarily ascertained by the color of crystal, X-ray diffraction and Raman spectrum. In addition, the thermal stability of the diamond was characterized with the results of static compressive strength and impact toughness at different temperatures, as well as DSC and TGA analyses. The experimental results show that the thermal stability of the Ⅱb type diamond is improved rapidly. Resistance-temperature characteristics measurement with a self-made clamp proved the semiconductivity of the diamond crystal. Based on summarization and analysis of experimental data, it is obvious that synthesizing a Ⅱb type diamond by this method can be realized easily with low producing cost and is available for synthetic diamond industry.

     

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