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多熱源合成SiC傳熱規律

Heat transfer law in multi-heat-source synthesis of silicon carbide

  • 摘要: 對多熱源合成SiC冶煉爐的溫度場進行了數值模擬,研究了冶煉爐內的溫度分布、熱流強度以及溫度梯度的動態變化規律,揭示了多熱源合成SiC的傳熱傳質規律.研究表明, 由于多熱源之間的屏蔽作用與熱能疊加作用,導致多熱源合成SiC技術比Acheson單熱源爐的單爐產量提高48.1%,特、一級品率提高30%,節能10%以上,并且杜絕了單熱源生產中頻繁噴爐事故,使生產更安全.

     

    Abstract: Through numerically simulating the temperature field in a multi-heat-source synthetic SiC furnace, the temperature distribution at characteristic points was obtained, and the dynamic laws of thermal gradient and thermal flow intensity were put forward. The heat and mass transfer law in multi-heat-source synthesis of silicon carbide were revealed. It was shown that due to the superposition effect of thermal fields and the shielding action of furnace cores, the SiC output of the multi-heat-source furnace increased by 48.1% compared with that of an Acheson singleheat-source furnace, the highest grade SiC increased by 30%, and the consumed energy reduced more than 10%. In addition, the frequent spouting was diminished, and the furnace was become more productive and safe.

     

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