Abstract: A heat-treatmentprocedure has been applied to InSb films prepared by thermal evaporation and magnetron sputtering, the films have been recrystallised from the melt in the vaccum with Ar protection.From the X-ray diffraction and SEM structure studies, it is found that the InSb films are mixtures of InSb, In, Sb before heat treatmentand are mainly single phase of InSb after recrystallization. The InSb grains grow with faceted interface and regular morphology. Theelectron mobility of InSb films (at room temperature) have been increased greatly after heat-treatment with 1.31×10⁴ cm² /(V·s) to 4.4×10⁴ cm² /(V·s) (thermal evaporation) and 2.15×10³ cm²/(V·s) to 2.04×10⁴ cm²/(V·s) (magnetron sputtering) respectively.